• Mosfet Oring Diode
• Oring Mosfet Circuit
• Voltage Using Mosfet Controller

IPP023N10N5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

The device integrates dual ORing MOSFET controllers, a single hot-swap controller, electronic circuit-breaker protection, and power monitoring in a single package. The device operates on 2.9V to 18V supply voltages. The device regulates the forward voltage drop across the. IC CTRLR MOSFET HV ORING 20-QFN. Lead Free Status / RoHS Status. Contains lead / RoHS non-compliant. To help the ORing MOSFET controller perform its job, it’s crucial to choose the proper power FET. You can select a suitable FET by following these steps: 1. Use an N-channel FET that has a.

Наименование прибора: IPP023N10N5

Маркировка: 023N10N5

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 375 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3.8 V

Максимально допустимый постоянный ток стока |Id|: 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 168 nC

Время нарастания (tr): 26 ns

Выходная емкость (Cd): 1810 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm

Тип корпуса: TO-220

IPP023N10N5 Datasheet (PDF)

0.1. ipp023n10n5.pdf Size:1330K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP023N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP023N10N5TO-220-31 DescriptiontabFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperatur

7.1. ipp023n08n5.pdf Size:1808K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP023N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP023N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

7.2. ipp023n04n-g ipb023n04n-g.pdf Size:245K _infineon

Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

7.3. ipp023ne7n3 ipi023ne7n31.pdf Size:846K _infineon

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

7.4. ipp023ne7n3.pdf Size:246K _inchange_semiconductor

Mosfet Oring Diode

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP023NE7N3IIPP023NE7N3FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

7.5. ipp023n04n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04NFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor ORing and Uninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Другие MOSFET... IPP042N03L, IPP040N06N, IPP037N08N3GE8181, IPP034N08N5, IPP034N03L, IPP030N10N5, IPP029N06N, IPP027N08N5, IRF150, IPP023N08N5, IPP020N08N5, IPP020N06N, IRFP340R, IRFP3415PBF, IRFP341R, IRFP342R, IRFP343R.

Oring Mosfet Circuit

Список транзисторов

Обновления

Voltage Using Mosfet Controller